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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A KRC281S~KRC286S EPITAXIAL PLANAR NPN TRANSISTOR L E B L With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. G Low on resistance : Ron=1 (Typ.) (IB=5mA) 2 3 1 P P EQUIVALENT CIRCUIT C B R1 DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H M 1. EMITTER 2. BASE 3. COLLECTOR E K SOT-23 MAXIMUM RATING (Ta=25 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 150 150 -55 150 UNIT V V V mA mW CHARACTERISTIC MARK SPEC TYPE KRC281S KRC282S KRC283S KRC284S KRC285S KRC286S hFE classification B MQB MRB MSB MTB MUB MVB Type Name Marking Lot No. 2002. 12. 5 Revision No : 1 J D 1/2 KRC281S~KRC286S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC281S KRC282S Input Resistor KRC283S KRC284S KRC285S KRC286S Transition Frequency Collector Output Capacitance * Characteristic of Transistor Only. Note) hFE Classification B:350 1200 fT * Cob VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz R1 SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA MIN. 20 50 25 350 TYP. 2.2 4.7 5.6 6.8 10 22 30 4.8 MAX. 0.1 0.1 1200 MHz pF k UNIT V V V A V 2002. 12. 5 Revision No : 1 2/2 |
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